BTB1580SN3 Просмотр технического описания (PDF) - Cystech Electonics Corp.

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Компоненты Описание

производитель

BTB1580SN3

PNP Epitaxial Planar Transistor

Cystech Electonics Corp. 

CYStech Electronics Corp.

Spec. No. : C655N3

Issued Date : 2017.11.27

Revised Date :

Page No. : 4/7

Typical Characteristics(Cont.)

10000

Built-in Diode Characteristics

Capacitance vs Reverse-Biased Voltage

100

1000

100

1

-40°C

0°C

25°C

85°C

140°C

10

100

1000

-IF, Forward Current(mA)

10000

Power Derating Curves

0.35

0.3

0.25

0.2

0.15

0.1

0.05

0

0 25 50 75 100 125 150 175 200

TA, Ambient Temperature(℃)

Cib

Cob

10

0.1

1

10

100

VR, Reverse-Biased Voltage(V)

Power Derating Curve

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

0 25 50 75 100 125 150 175 200

TC, Case Temeprature(℃)

BTB1580SN3

CYStek Product Specification

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