MMBD701LT3G Просмотр технического описания (PDF) - ON Semiconductor

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производитель

MMBD701LT3G

Silicon Hot−Carrier Diodes

ON Semiconductor 

MBD701, MMBD701LT1

TYPICAL ELECTRICAL CHARACTERISTICS

2.0

500

f = 1.0 MHz

1.6

400

KRAKAUER METHOD

1.2

300

0.8

200

0.4

100

0

0 5.0 10 15 20 25 30 35 40 45 50

VR, REVERSE VOLTAGE (VOLTS)

Figure 1. Total Capacitance

0

0 10 20 30 40 50 60 70 80 90 100

IF, FORWARD CURRENT (mA)

Figure 2. Minority Carrier Lifetime

10

1.0

TA = 100°C

TA = 75°C

0.1

0.01

0.001

0

TA = 25°C

10

20

30

40

VR, REVERSE VOLTAGE (VOLTS)

Figure 3. Reverse Leakage

100

10

TA = 85°C

TA = −40°C

1.0

TA = 25°C

0.1

50

0 0.2 0.4

0.8

1.2

1.6

2.0

VF, FORWARD VOLTAGE (VOLTS)

Figure 4. Forward Voltage

SINUSOIDAL

GENERATOR

IF(PEAK)

CAPACITIVE

CONDUCTION

IR(PEAK)

FORWARD

CONDUCTION

STORAGE

CONDUCTION

BALLAST

NETWORK

(PADS)

PADS

DUT

Figure 5. Krakauer Method of Measuring Lifetime

SAMPLING

OSCILLOSCOPE

(50 W INPUT)

http://onsemi.com

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