B5818W_ Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

B5818W_

Schottky Barrier Diode

Galaxy Semi-Conductor 

Production specification

Schottky Barrier Diode

FEATURES

 Extremely low VF.

 Low stored change,majority carrier

conduction

 Low power loss/high efficient.

 MSL 1.

APPLICATIONS

Pb

Lead-free

 For Use In Low Voltage, High Frequency Inverters

 Free Wheeling, And Polarity Protection Applications

B5818W-B5819W

SOD-123

ORDERING INFORMATION

Type No.

Marking

B5818W

SK

B5819W

SL

Package Code

SOD-123

SOD-123

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

symbol B5818W

Non-Repetitive Peak reverse voltage

VRSM

36

B5819W Unit

48

V

Peak repetitive Peak reverse voltage

Working Peak Reverse voltage

DC Reverse Voltage

VRRM

VRWM

30

VR

40

V

RMS Reverse Voltage

Average Rectified output Current

Repetitive Peak Forward Current

(At Rated VR, Square Wave, 100 kHz, TL = 95°C)

Peak forward surge current@=8.3ms

Power Dissipation

Thermal Resistance Junction to Ambient

Junction and Storage Temperature Rage

VR(RMS)

Io

IFRM

IFSM

Pd

RθJA

TJ,TSTG

21

28

1

625

10

500

200

-65 to+150

V

A

mA

A

mW

℃/W

℃

A006

Rev.A

www.gmesemi.com

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