2SC4881 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC4881 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc=2.5A; IB= 125mA
VeE(sat) Base-Emitter Saturation Voltage
lc=2.5A; IB= 125mA
ICBO
Collector Cutoff Current
VOB= 50V ; IE= 0
IEBO
Emitter Cutoff Current
VEB- 6V; lc= 0
hpE-1
DC Current Gain
lc=1A; VCE=1V
hpE-2
DC Current Gain
lc=2.5A;VCE=1V •
COB
Output Capacitance
I E = 0 ; VCB= 10V; f= 1.0MHz
fi
Current-Gain—Bandwidth Product
lc=1A; VCE=4V
Switching times
ton
Turn-on Time
lstg
Storage Time
tf
Fall Time
RL=12a,lBi=-lB2=125mA,
Vcc- 30V
2SC4881
MIN TYP. MAX UNIT
50
V
0.4
V
1.3
V
1
uA
1
uA
100
320
60
45
PF
100
MHz
0.1
us
0.8
us
0.1
ws
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