B5818WS Просмотр технического описания (PDF) - MAKO SEMICONDUCTOR CO.,LIMITED
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B5818WS Datasheet PDF : 2 Pages
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Plastic-Encapsulate Diodes
SCHOTTKY BARRIER DIODE
FEATURES
or use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
B5817WS/B5818WS/B5819WS
-
+
MARKING B5817WS: SJ B5818WS:SK B5819WS: SL
SOD-323
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
Paramete
Symbol B5817WS B5818WS B5819WS
M r
A Non-Repetitive Peak reverse voltage
VRM
20
40 KO Peak repetitive Peak reverse voltage
htt 08- Se Working Peak Reverse Voltage
p 3 m DC Blocking Voltage
:/ 78 ic RMS Reverse Voltage
VRRM
VRWM
20
VR
VR(RMS)
14
/ww -87 ond Average Rectified Output Current
w 3 uc Peak forward surge current @=8.3ms
IO
IFSM
.ma to Repetitive Peak Forward Current
ko r C Power Dissipation
se o. ThermalResistanc Junction to Ambient
mi.h , Li Storage temperature
IFR
M
Pd
RθJA
TSTG
30
30
21
1
9
1.5
250
500
-65~+150
k/ mited ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
40
40
28
Parameter
Symbol Test conditions
Min
Max
Reverse breakdown voltage
B5817WS
20
V(BR) IR= 1mA
B5818WS
30
B5819WS
40
VR=20V
B5817WS
Reverse voltage leakage current
IR
VR=30V
B5818WS
1
VR=40V
B5819WS
Unit
V
V
V
A
A
A
mW
/W
Unit
V
mA
Forward voltage
Diode capacitance
B5817WS
B5818WS
VF
B5819WS
IF=1A
IF=3A
IF=1A
IF=3A
IF=1A
IF=3A
C VR=4V, f=1MHz
D
0.45
V
0.75
0.55
V
0.875
0.6
V
0.9
120
pF
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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