AP1332GEV-HF Просмотр технического описания (PDF) - Advanced Power Electronics Corp

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Компоненты Описание

производитель

AP1332GEV-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

4

T A =25 o C

3

5.0V

4.5V

3.5V

2

2.5V

1

V G = 1.8V

0

0

1

2

3

4

5

6

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1200

I D = 0.2 A

T A =25 o C

1000

800

600

400

200

0

1

2

3

4

5

6

V GS , Gate-to-Source Voltage (V)

Fig 3. On-Resistance v.s. Gate Voltage

2

1.6

1.2

T j =150 o C

0.8

T j =25 o C

0.4

0

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

AP1332GEV-HF

3.2

T A = 150 o C

2.4

5.0V

4.5V

3.5V

1.6

2.5V

V G = 1.8V

0.8

0.0

0

1

2

3

4

5

6

V DS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

1.8

I D =0.4A

V G =4.5V

1.6

1.4

1.2

1.0

0.8

0.6

-50

0

50

100

150

T j , Junction Temperature ( o C)

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

2

I D =250uA

1.6

1.2

0.8

0.4

0

-50

0

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature

3

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