AP1332GEV-HF Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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AP1332GEV-HF Datasheet PDF : 4 Pages
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AP1332GEV-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=4.5V, ID=400mA
VGS=2.5V, ID=300mA
VGS=1.8V, ID=200mA
VDS=VGS, ID=250uA
VDS=5V, ID=400mA
VDS=16V, VGS=0V
VGS=+6V, VDS=0V
ID=400mA
VDS=10V
VGS=4.5V
VDS=10V
ID=400mA
RG=3.3Ω
VGS=5V
VGS=0V
VDS=10V
f=1.0MHz
20 -
-
V
-
- 0.9 Ω
-
-
2Ω
-
-
3Ω
0.25 -
1V
- 1.3 -
S
-
- 10 uA
-
- +30 uA
- 1.2 1.9 nC
- 0.3 - nC
- 0.3 - nC
- 18 - ns
- 34 - ns
- 110 - ns
- 115 - ns
- 45 72 pF
- 22 - pF
- 12 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=300mA, VGS=0V
Min. Typ. Max. Unit
-
- 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.Surface mounted on FR4 board.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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