AP1430GEU6-HF Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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производитель
AP1430GEU6-HF Datasheet PDF : 5 Pages
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AP1430GEU6-HF
1.6
T A =25 o C
1.2
0.8
0.4
10V
7.0V
6 .0V
5.0 V
V G = 4 .0V
1.2
T A =150 o C
0.8
0.4
10V
7.0V
6 0V
5.0 V
V G = 4 .0V
0
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D = 150m A
T A =25 o C
1.9
1.8
1.7
.
1.6
1.5
1.4
2
4
6
8
10
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
0.5
0.4
0.3
0.2
T j =150 o C
0.1
T j =25 o C
2.4
I D = 230m A
V G =10V
2
1.6
1.2
20
0.8
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
I D =250uA
1.2
0.8
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
0.0
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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