MB1S Просмотр технического описания (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Номер в каталоге
Компоненты Описание
производитель
MB1S Datasheet PDF : 4 Pages
| |||
MB05S THRU MB10S
HD BF46
MBF Plastic-Encapsulate Bridge Rectifier
Features
●Io
0.8A
●VRRM
50V-1000V
MBF
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● General purpose 1 phase Bridge
rectifier applications
Marking
● MBXXS
X : From 05 To 10
Item
Symbol Unit
Repetitive Peak Reverse
Voltage
VRRM
V
Maximum RMS Voltage
V RMS
V
Conditions
MB
05S 1S 2S 4S 6S 8S 10S
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
Average Rectified Output
Current
On alumina substrate
Ta=25℃
IO
A 60Hz sine wave,
0.8
R-load, Ta=25℃ On glass-epoxi substrate
0.5
Surge(Non-
repetitive)Forward Current
IFSM
A
60HZ sine wave, 1 cycle, Tj=25℃
30
Current Squared Time
Storage Temperature
Junction Temperature
I2t
A2S 1ms≤t<8.3ms Tj=25℃，Rating of per diode
Tstg
℃
Tj
℃
3.7
-55 ~+150
-55 ~+150
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
Peak Forward Voltage
Peak Reverse Current
Thermal Resistance
VFM
IRRM
V
μA
RθJ-A
℃/W
RθJ-L
IFM=0.4A, Pulse measurement, Rating of per diode
VRM=VRRM , Pulse measurement, Rating of per diode
Between junction and ambient, On alumina substrate
Between junction and ambient, On glass-epoxi substrate
Between junction and lead
Max
1.0
10
76
134
20
High Diode Semiconductor
1
Share Link: 