BU508A Просмотр технического описания (PDF) - Thinki Semiconductor Co., Ltd.
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BU508A Datasheet PDF : 5 Pages
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BU508A/BU508D
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Minimum
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 100mA, IB = 0)
VCEO(sus)
700
Maximum
-
Collector Cut off Current
(VCE = 1500V, VBE = 0)
ICES
-
1.0
Emitter Cut off Current
(VEB = 5.0V, IC = 0)
ON Characteristics (1)
BU508A
BU508D
IEBO
-
10
300
Collector-Emitter Saturation Voltage
(IC = 4.5A, IB = 2.0A)
BU508A, BU508D
VCE(sat)
-
1.0
Base-Emitter Saturation Voltage
(IC = 4.5A, IB = 2.0A)
VBE(sat)
-
1.5
Diode Forward Voltage
(IF = 4.0A)
BU508D
VF
-
2.0
Dynamic Characteristics
Current Gain-Bandwidth Product
(IC = 0.1A, VCE = 5.0V, f = 1.0MHz)
fT
4.0 (Typical)
-
Output Capacitance
(VCE = 10V, IE = 0, f = 1.0MHz)
Cob
125 (Typical)
-
Switching Characteristics
Storage Time
Fall Time
IC = 4.5A, IB1 = 1.4A,
ts
7.0 (Typical)
-
LB = 10µH
tf
1.0 (Typical)
-
(1) Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2.0%
Unit
V
mA
V
MHz
pF
µs
Rev.10C
© 2006 Thinki Semiconductor Co., Ltd.
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