BUX98P Просмотр технического описания (PDF) - Inchange Semiconductor

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BUX98P

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BUX98P

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A ; IB= 0; L= 25mH

450

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 100mA; IC= 0

7

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB= 4A

VBE(sat) Base-Emitter Saturation Voltage

ICEV

Collector Cutoff Current

ICER

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 20A; IB= 4A

VCE=VCEV; VBE=-1.5V

VCE=VCEV; VBE=-1.5V;TC=100℃

VCE=VCEV; RBE= 5Ω

VCE=VCEV; RBE= 5Ω;TC=100℃

VEB= 5V; IC= 0

0.9

V

1.5

V

0.2

mA

1.0

0.2

mA

1.0

1.0 mA

hFE

DC Current Gain

IC= 1A ; VCE= 5V

15

50

isc website：www.iscsemi.cn

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