RBQ10NS100AFH Просмотр технического описания (PDF) - ROHM Semiconductor
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RBQ10NS100AFH Datasheet PDF : 9 Pages
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RBQ10NS100AFH
Schottky Barrier Diode
(AEC-Q101 qualified) Data sheet
●Outline
VR
100
V
Io
10
A
IFSM
100
A
●Features
High reliability
Power mold type
Cathode common dual type
Low IR
●Inner Circuit
●Application
●Packaging Specifications
Switching power supply
Packing
Embossed Tape
Reel Size(mm)
330
Taping Width(mm)
24
●Structure
Quantity(pcs)
1000
Silicon epitaxial planar
Taping Code
TL
Marking
BQ10NS100A
●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified)
Parameter
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
100
V
Reverse voltage
Average rectified forward current
Peak forward surge current
Junction temperature(1)
VR
Reverse direct voltage
100
V
Io
60Hz half sin waveform，resistive load，
Io/2 per diode，Tc=105℃Max.
10
A
IFSM
60Hz half sin waveform，
non-repetitive，per diode，Ta=25℃
100
A
Tj
-
150
℃
Storage temperature
Tstg
-
Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dPd/dTj<1/RθJA.
Attention
-55 ～ 150
℃
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2019/05/27_Rev.002
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