BTA312-600CT Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
BTA312-600CT Datasheet PDF : 1 Pages
| |||
isc Thyristors
INCHANGE Semiconductor
BTA312-600CT
DESCRIPTION
·With TO-220 packaging
·High operating junction temperature
·Very high commutation performancemaximized at each
gate sensitivity
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·High temperature, high power motor control
·Solid state relays;heating and cooking appliances
·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM
VRRM
IT(AV)
ITSM
PG(AV)
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Surge non-repetitive on-state current
50HZ
60HZ
Average gate power dissipation ( over any 20 ms period )
Tj
Operating junction temperature
Tstg Storage temperature
MIN
UNIT
600
V
600
V
12
A
95
105
A
0.5
W
-40~150 ℃
-40~150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
IDRM
Repetitive peak reverse current
Repetitive peak off-state current
VR=VRRM Rated;
VD=VDRM Rated;
Tj=150℃
VTM On-state voltage
IGT
Gate-trigger current
VGT Gate-trigger voltage
IT=15A
Ⅰ
VD =12V;IT=0.1A;
Ⅱ
Ⅲ
VD =12V;IT=0.1A;
MIN MAX UNIT
2 mA
1.6 V
35
35 mA
35
1.5 V
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
Share Link: 