BCM846BS Просмотр технического описания (PDF) - Diotec Semiconductor Germany

Номер в каталоге

Компоненты Описание

производитель

BCM846BS

SMD Matched NPN Transistors

Diotec Semiconductor Germany  

BCM846BS, BCM847BS

Characteristics

Tj = 25°C Min.

DC current gain – Kollektor-Basis-Stromverstärkung

VCE = 5 V

IC = 2 mA

hFE

200

Current gain matching – Stromverstärkungs-Abgleich

VCE = 5 V

IC = 2 mA

hFE1/hFE2

0.9

Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 1)

IC = 10 mA

IC = 100 mA

IB = 0.5 mA

IB = 5 mA

Base-Emitter voltage – Basis-Emitter-Spannung 1)

VCEsat

–

–

VCE = 5 V

IC = 2 mA

IC = 10 mA

VBE

Base-Emitter voltage matching – Abgleich Basis-Emitter-Spannung 1)

580 mV

–

VCE = 5 V

IC = 2 mA

|VBE1 - VBE2|

–

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V

E open

ICBO

–

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 5 V

C open

IEBO

–

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

100 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

–

Typical thermal resistance junction to ambient (per device)

Typischer Wärmewiderst. Sperrschicht – Umgebung (pro Bauteil)

RthA

Typ.

Kennwerte

Max.

–

450

1.0

1.1

–

250 mV

–

600 mV

–

700 mV

–

770 mV

–

2 mV

–

15 nA

–

100 nA

–

–

–

420 K/W 2)

4.5 pF

120

[%]

100

80

60

40

20

Ptot

0

0 TA 50

100

150 [°C]

Power dissipation versus ambient temperature 2)

Verlustleistung in Abh. von d. Umgebungstemp.2)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

2 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

© Diotec Semiconductor AG

Share Link: