DMT3002LPS Просмотр технического описания (PDF) - Diodes Incorporated.
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DMT3002LPS Datasheet PDF : 7 Pages
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DMT3002LPS
0.004
0.0035
0.003
0.0025
VGS = 4.5V, ID = 25A
0.002
0.0015
0.001
0.0005
VGS = 10V, ID = 25A
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
2
1.8
1.6
ID = 1mA
1.4
1.2
ID = 250μA
1
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
30
VGS = 0V
25
20
10000
f=1MHz
Ciss
Coss
15
10
TA = 125oC
TA = 85oC
5
TA = 150oC
TA = 25oC
TA = -55oC
0
0
0.2 0.4 0.6 0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
1000
Crss
100
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
1000
RDS(ON) LIMITED
8
6
4
VDS = 15V, ID = 25A
2
0
0
20
40
60
80
Qg (nC)
Figure 11. Gate Charge
100
PW=1µs
10 Plz help adPdWn=P1e0Wwµ=s1S00OµsA plot
PW=1ms
1
0.1
0.01
TJ(MAX)=150℃
TC=25℃
Single Pulse
DUT on infinite
heatsink
VGS=10V
PW=10ms
PW=100ms
PW=1s
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMT3002LPS
Document number: DS38283 Rev. 5 - 2
4 of 7
www.diodes.com
April 2017
© Diodes Incorporated
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