PJM3415PSA-4K Просмотр технического описания (PDF) - Unspecified
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PJM3415PSA-4K Datasheet PDF : 6 Pages
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PJM3415PSA-4K
Silicon P-Channel Power MOSFET
Electrical Characteristics (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Static Characteristics
Drain-source breakdown voltage
-V(BR)DSS
VGS = 0V, ID=-250µA
20
Zero gate voltage drain current
-IDSS
VDS =-20V,VGS = 0V
Gate-body leakage current
IGSS
VGS=±10V, VDS=0V
Gate threshold voltage Note2
-VGS(th)
VDS =VGS, ID =-250µA
0.4
Drain-source on-resistance Note2
RDS(on)
VGS =-4.5V, ID =-4A
VGS =-2.5V, ID =-4A
VGS =-1.8V, ID =-2A
Forward tranconductance Note2
gFS
VDS =-5V, ID =-4A
8
Dynamic characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
VDS =-10V,VGS =0V,f=1MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDS=-10V, VGS=-4.5V RGEN =3Ω,
RL=2.5Ω,
Turn-off fall time
tf
Total gate charge
Qg
Gate-source charge
Qgs
VDS =-10V,VGS =-4.5V,ID =-4A
Gate-drain charge
Qgd
Source-Drain Diode characteristics
Diode Forward voltage Note1
-VDS
VGS =0V, IS=-1A
Notes:1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2.Pulse Test : Pulse width≦3 00µs, duty cycle≦2 %.
Type
33
45
63
1450
205
160
9.5
17
94
35
17.2
1.3
4.5
Max
1
±50
1
50
60
90
1
Units
V
µA
µA
V
mΩ
S
pF
ns
nC
V
Notices:
The MOSFET is a static-sensitive component and has strict requirements on the production environment. It is
recommended to avoid static interference during storage and production. The temperature of the tin furnace or
reflow oven do not exceed 260 degrees.
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Revision：1.1 Jul-2019
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