Features
Low Gate Charge and RDS(on)
ESD protected(HBM) up to 4KV
Application
Load switch and in PWM applicatopns
Absolute Maximum Ratings
Ratings at TA =25℃ unless otherwise specified.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient Note1
Symbol
-VDS
VGS
-ID
PD
TJ, TSTG
Symbol
RθJA
PJM3415PSA-4K
Silicon P-Channel Power MOSFET
SOT-23
1. Gate 2.Source 3.Drain
Marking: 3415E
Schematic Diagram
D
G
S
Maximum
20
±8
4
1.25
150, -55 to 150
Typ.
100
Units
V
V
A
W
°C
Units
°C/W
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Revision:1.1 Jul-2019