PJM2324NSA Просмотр технического описания (PDF) - Unspecified

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PJM2324NSA

N- Enhancement Mode Field Effect Transistor

Unspecified 

PJM2324NSA

N- Enhancement Mode Field Effect Transistor

Features

 Trench FET Power MOSFET

 RDS(ON) < 234mΩ (VGS = 10V)

RDS(ON) < 278mΩ (VGS = 4.5V)

SOT-23

Applications

 DC/DC Converter

 Load Switching

1. Gate 2.Source 3.Drain

Marking: S24

Schematic diagram

3 Drain

1

Gate

2 Source

Absolute Maximum Ratings

(TA=25℃, unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current Note 1

Total Power Dissipation

Operating Junction Temperature

Storage Temperature

Thermal Characteristics

Parameter

Thermal Resistance, Junction to Ambient Note2

Symbol

VDS

VGS

ID

IDM

PD

TJ

TSTG

Value

100

± 20

2

8

0.35

150

- 55 to + 150

Unit

V

V

A

A

W

℃

℃

Symbol

RθJA

Value

357

Unit

℃/W

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Revision：1.0 Sep-2018

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