PJM2301PSA-S Просмотр технического описания (PDF) - Unspecified

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PJM2301PSA-S

P- Enhancement Mode Field Effect Transistor

Unspecified 

PJM2301PSA-S

P- Enhancement Mode Field Effect Transistor

Features

⚫ VDS= -20V ID= -2A

⚫ RDS(ON) =120mΩ (typ) @ VGS=-2.5V

RDS(ON) =88mΩ (typ) @ VGS=-4.5V

⚫ High power and current handing capability

⚫ Halogen and Antimony Free

⚫ Surface mount package

Applications

⚫ Battery protection

⚫ Load switch

⚫ Power management

SOT-23

1. Gate 2.Source 3.Drain

Marking : S01

Drain

3

1

Gate

2 Source

Absolute Maximum Ratings

TC=25 ℃ unless otherwise noted

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current Note1

Parameter

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Thermal Resistance,Junction-to-Ambient Note2

Symbol

VDS

VGS

ID

IDM

PD

TJ, TSTG

Value

Unit

- 20

V

± 12

-2

A

- 10

0.7

W

- 55 to 150

°C

Symbol

RθJA

Value

178

Unit

℃/W

www.pingjingsemi.com

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Revision:1.0 Oct-2018

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