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TJ20A10M3 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
TJ20A10M3
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSVI)
Toshiba
TJ20A10M3 Datasheet PDF : 6 Pages
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TJ20A10M3
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10
µ
100
µ
r
th
– t
w
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
3.57°C/W
1m
10m
100m
1
10
Pulse width tw (s)
SAFE OPERATING AREA
−
100
ID max (pulse)
*
1 ms
*
100
µ
s
*
−
10
−
1
*
Single pulse Tc=25
℃
Curves must be derated
linearly with increase in
temperature.
−
0.1
−
0.1
−
1
−
10
VDSS max
−
100
−
1000
Drain-source voltage VDS (V)
E
AS
– T
ch
200
L
=
500
µ
H
VDD
= −
25 V
IAR
= −
20 A
160
120
80
40
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
0V
−
15 V
B
VDSS
I
AS
V
DD
V
DS
Test circuit
RG
=
25
Ω
V
DD
= −
25 V, L
=
500
µ
H
Waveform
E
ΕAS
=
1
2
⋅
L
⋅
I2
⋅
BVDSS
BVDSS
−
VDD
5
2018-06-01
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