AN609 Просмотр технического описания (PDF) - Vishay Semiconductors

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AN609

Thermal Simulation of Power MOSFETs on the P-Spice Platform

Vishay Semiconductors 

AN609

Vishay Siliconix

(A) j-c.opt, SI7390DP j-c txt

4.0

(A) j-a.opt, SI7390DP j-a txt

80

3.0

60

2.0

40

1.0

x

0

100us

V(CF1:1)

1.0ms

“j-c“

10ms

Time

(A) j-c.opt, SI7390DP j-c txt

4.0

3.0

100ms 300ms

x

2.0

x

1.0

0

100us

1.0ms

V(CF1:1) “j-c“

10ms

Time

100ms 300ms

120

0

100us 1.0ms 10ms

100ms 1.0s

10s

V(RF1:1) “j-a“

Time

(A) j-a.opt, SI7390DP j-a txt

80

100s 1.0Ks

60

40

120

0

100us 1.0ms

10ms

100ms 1.0s

10s

100s 1.0Ks

V(RT1:1) “j-a“

Time

Document Number 73554

07-Oct-05

www.vishay.com

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