SI4483EDY Просмотр технического описания (PDF) - Vishay Semiconductors
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Компоненты Описание
производитель
SI4483EDY Datasheet PDF : 6 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
50
VGS = 10 thru 4 V
3V
40
40
Si4483EDY
Vishay Siliconix
30
30
20
10
0
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.020
20
TC = 125 °C
10
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1.6
0.016
1.4
0.012
VGS = 4.5 V
1.2
0.008
VGS = 10 V
1.0
0.004
0.8
0.000
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current
50
TJ = 150 °C
10
TJ = 25 °C
1
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
0.04
ID = 14 A
0.03
0.02
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.01
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72862
S-83038-Rev. D, 22-Dec-08
www.vishay.com
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