SI4483EDY Просмотр технического описания (PDF) - Vishay Semiconductors

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SI4483EDY

P-Channel 30-V (D-S) MOSFET

Vishay Semiconductors 

P-Channel 30-V (D-S) MOSFET

Si4483EDY

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

- 30

0.0085 at VGS = - 10 V

0.014 at VGS = - 4.5 V

ID (A)

- 14

- 11

SO-8

S1

S2

S3

G4

8D

7D

6D

5D

Top View

Ordering Information: Si4483EDY-T1-E3 (Lead (Pb)-free)

Si4483EDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET® Power MOSFET

• ESD Protection: 3000 V

APPLICATIONS

• Notebook PC

- Load Switch

- Adapter Switch

S

G

7100 Ω

P-Channel

D

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

- 30

V

VGS

± 25

Continuous Drain Current (TJ = 150 °C)a

Pulsed Drain Current

TA = 25 °C

TA = 70 °C

ID

- 14

- 10

- 11

-8

A

IDM

- 50

Continuous Source Current (Diode Conduction)a

IS

- 2.7

- 1.36

Maximum Power Dissipationa

TA = 25 °C

TA = 70 °C

PD

3.0

1.5

1.9

0.95

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

Maximum Junction-to-Foot (Drain)

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

t ≤ 10 s

Steady State

Steady State

Symbol

RthJA

RthJF

Typical

33

70

16

Maximum

42

85

21

Unit

°C/W

Document Number: 72862

S-83038-Rev. D, 22-Dec-08

www.vishay.com

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