SI4286DY Просмотр технического описания (PDF) - Unspecified
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SI4286DY Datasheet PDF : 4 Pages
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Si4286DY
Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Off Characteristics
BVDSS
IDSS
IGSS
On Characteristics3
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
VGS=0V,ID=250μA
VGS=0V, VDS=40V
VGS=±20V, VDS=0A
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance3
GFS
Forward Transconductance
Dynamic Characteristics4
VGS=VDS, ID=250μA
VGS=10V,ID=3A
VDS=10V, ID=3A
Ciss
Input Capacitance
Coss
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Crss
Reverse Transfer Capacitance
Switching Characteristics4
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time2.3
Rise Time2.3
Turn-Off Delay Time2.3
Fall Time2.3
Total Gate Charge2.3
Gate-Source Charge2.3
Gate-Drain “Miller” Charge2.3
VDS=20V, ID=1A
RGEN=25Ω. VGS=4.5V,
VGS=4.5V, VDS=20V,
ID=3A
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage2 VGS=0V,IS=1A
ls
Maximum Body-Diode Continuous Current
www.doingter.cn
—2—
Min Typ Max Units
40
---
---
V
---
---
1
μA
---
--- ±100 nA
1.2
1.6
2.5
V
11
28
32
mΩ
---
6.5
---
S
---
420 800
---
65
120
pF
---
40
80
---
3.2
6
ns
---
8.6
16
ns
---
18
36
ns
---
6
12
ns
---
5.2
10
nC
---
1.2
2.4
nC
---
2.5
5
nC
---
0.7
1
V
---
---
5
A
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