SI3586DV-T1-E3 Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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SI3586DV-T1-E3 Datasheet PDF : 10 Pages
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SI3586DV-T1-E3
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
10
VGS = 10 V thru 5 V
4
8
3
4V
6
2
4
www.VBsemi.tw
TC = - 55 °C
25 °C
125 °C
1
0
0
0.05
2V
3V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.04
0.03
0.02
VGS = 4.5 V
VGS = 10 V
0.01
0.00
0
1
2
3
4
5
6
7
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
8
VDS = 15 V
ID = 1.8 A
6
4
2
0
0
1
2
3
4
Qg - Total Gate Charge (nC)
Gate Charge
2
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
300
250
Ciss
200
150
100
Coss
50
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
1.6
VGS = 10 V
ID = 2.5 A
1.4
1.2
1.0
0.8
0.6
0.4
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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