SI4559EY(1998) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4559EY Datasheet PDF : 6 Pages
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Si4559EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
PĆCHANNEL
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.5
10
TJ = 175_C
TJ = 25_C
0.4
0.3
0.2
ID = 3.1 A
0.1
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD – Source-to-Drain Voltage (V)
Threshold Voltage
0.75
0.50
0.25
ID = 250 µA
0.00
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Single Pulse Power
50
TC = 25_C
Single Pulse
40
30
20
10
–0.25
–50 –25 0 25 50 75 100 125 150 175
TJ – Temperature (_C)
0
0.01
0.1
1
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
10
30
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
1
10
30
www.vishay.com S FaxBack 408-970-5600
2-6
Document Number: 70167
S-57253—Rev. D, 24-Feb-98
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