SI3440DV(2003) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3440DV Datasheet PDF : 5 Pages
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Si3440DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.8
30
25
0.4
ID = 250 mA
20
0.0
15
−0.4
10
−0.8
5
Single Pulse Power
−1.2
−50 −25
0 25 50 75 100 125 150
TJ − Temperature (_C)
0
0.01
0.1
Safe Operating Area
100
rDS(on) Limited
10
ID(on)
1 Limited
0.1
TA = 25_C
Single Pulse
IDM Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BVDSS Limited
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
1
10
Time (sec)
100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 90_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10
100
600
www.vishay.com
4
Document Number: 72380
S-32412—Rev. B, 24-Nov-03
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