SI3440DV(2003) Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3440DV Datasheet PDF : 5 Pages
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Si3440DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 150 V, VGS = 0 V
VDS = 150 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 1.5 A
VGS = 6.0 V, ID = 1.4 A
VDS = 15 V, ID = 1.5 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 75 V, VGS = 10 V, ID = 1.5 A
f = 1 MHz
VDD = 75 V, RL = 75 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
2
4
V
"100
nA
1
mA
5
4
A
0.310
0.375
W
0.330
0.400
4.1
S
0.8
1.2
V
5.4
8
1.1
nC
1.9
4
9
15
W
8
15
10
15
ns
20
30
15
25
40
60
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
4.0
3.5
VGS = 10 thru 5 V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
4V
3V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS − Drain-to-Source Voltage (V)
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2
Transfer Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TC = 125_C
25_C
0.5
−55_C
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VGS − Gate-to-Source Voltage (V)
Document Number: 72380
S-32412—Rev. B, 24-Nov-03
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