SI3430DV-T1 Просмотр технического описания (PDF) - Vishay Semiconductors
Номер в каталоге
Компоненты Описание
производитель
SI3430DV-T1 Datasheet PDF : 5 Pages
| |||
Si3430DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 80 V, VGS = 0 V
VDS = 80 V, VGS = 0 V, TJ = 85_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 2.4 A
VGS = 6.0 V, ID = 2.3 A
VDS = 15 V, ID = 2.4 A
IS = 1.7 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
Rg
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 50 V, VGS = 10 V, ID = 2.4 A
VDD = 50 V, RL = 50 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
VGS = 0.1 V, f = 5 MHz
IF = 1.7 A, di/dt = 100 A/ms
Min Typ Max Unit
2
V
"100
nA
1
mA
25
8
A
0.148
0.170
W
0.160
0.185
7
S
0.8
1.2
V
5.5
6.6
1.5
nC
1.4
1
4
W
9
20
11
20
ns
16
30
9
20
2.8
W
50
80
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
8
8
VGS = 10 thru 6 V
6
5V
6
Transfer Characteristics
4
2
4V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
www.vishay.com
2
4
TC = 125_C
2
25_C
- 55_C
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Document Number: 71235
S-31725—Rev. B, 18-Aug-03
Share Link: 