SI3430DV-T1-E3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3430DV-T1-E3 Datasheet PDF : 10 Pages
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www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
8
VGS = 10 V thru 6 V
5V
6
6
Si3430DV
Vishay Siliconix
4
2
0
0.0
4V
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.25
0.20
0.15
0.10
VGS = 6.0 V
VGS = 10 V
0.05
0.00
0
2
4
6
8
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 50 V
ID = 2.4 A
8
6
4
2
0
0
1
2
3
4
5
6
Qg - Total Gate Charge (nC)
Gate Charge
4
2
0
0
500
TC = 125 °C
25 °C
-55 °C
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
400
Ciss
300
200
100
Crss
Coss
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
2.2
2.0
VGS = 10 V
ID = 2.4 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S19-0836-Rev. E, 30-Sep-2019
3
Document Number: 71235
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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