SI2342DS-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI2342DS-T1-GE3 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
Si2342DS
Vishay Siliconix
9
6
Package Limited
3
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating a
3.0
1.0
2.5
0.8
2.0
0.6
1.5
0.4
1.0
0.2
0.5
0.0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0
25
50
75
100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S11-1388-Rev. A, 11-Jul-11
5
Document Number: 63302
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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