SI2333DS Просмотр технического описания (PDF) - KEXIN Industrial

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производитель

SI2333DS

P-Channel MOSFET

KEXIN Industrial 

SMD Type

MOSFET

P-Channel MOSFET

SI2333DS (KI2333DS)

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

Static Drain-Source On-Resistance (Note.1)

On state drain current

(Note.1)

Forward Transconductance (Note.1)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

Diode Forward Voltage

VDSS

IDSS

IGSS

VGS(th)

RDS(On)

ID(ON)

gFS

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

IS

VSD

ID=-250μA, VGS=0V

VDS=-9.6V, VGS=0V

VDS=-9.6V, VGS=0V, TJ=55℃

VDS=0V, VGS=±8V

VDS=VGS ID=-250μA

VGS=-4.5V, ID=-5.3A

VGS=-2.5V, ID=-4.6A

VGS=-1.8V, ID=-2A

VGS=-5V, VDS=-4.5V

VDS=-5V, ID=-5.3A

VGS=0V, VDS=-6V, f=1MHz

VGS=-4.5V, VDS=-6V, ID=-5.3A

VGS=-4.5V, VDS=-6V, RL=6Ω,

RG=6Ω,ID=-1A

IS=-1A,VGS=0V

Note.1:Pulse test: PW ≤ 300 μs, duty cycle ≤ 2 %.

Min Typ Max Unit

-12

V

-1

uA

-10

±100 nA

-0.4

-1

V

32

42 mΩ

59

-20

A

17

S

1100

390

pF

300

11.5 18

1.5

nC

3.2

25 40

45 70

ns

72 110

60 90

-1

A

-1.2 V

■ Marking

Marking

E3*

2 www.kexin.com.cn

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