SI2333DDS-T1-GE3 Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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SI2333DDS-T1-GE3 Datasheet PDF : 9 Pages
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SI2333DDS-T1-GE3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.08
10
0.06
TJ = 150 °C
0.04
1
TJ = 25 °C
0.02
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ID = 5.1 A
TJ = 25 °C
TJ = 125 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.1
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
1.0
0.8
ID = 250 μA
0.7
0.5
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
8
6
4
2
TA = 25 °C
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
1000
100
Limited by RDS(on)*
10
100 μs
1 ms
1
10 ms
0.1
TC = 25 °C
Single Pulse
0.01
0.1
1
100 ms
1 s, 10 s
DC
BVDSS Limited
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
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