SI2328DS-T1-GE3 Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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SI2328DS-T1-GE3 Datasheet PDF : 9 Pages
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SI2328DS-T1-GE3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
3
VGS = 10 V thru 5 V
4
VGS = 4.5V
2.4
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3
1.8
2
1.2
TC = 25 °C
1
VGS = 3 V
0
0
0.5
1
1.5
2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.350
0.300
0.250
0.200
0.150
VGS = 4.5 V
VGS = 6 V
VGS = 10 V
0
1
2
3
4
5
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 1.6 A
8
VDS = 25 V
6
VDS = 50 V
4
VDS = 80 V
2
0
0
1.5
3
4.5
6
Qg - Total Gate Charge (nC)
Gate Charge
0.6
0
0
300
TC = 125 °C
TC = - 55 °C
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
240
Ciss
180
120
60
Coss
Crss
0
0
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
Capacitance
2.2
ID = 1.5 A
1.75
1.3
VGS = 6 V
0.85
VGS = 10 V
0.4
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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