IR21531PBF Просмотр технического описания (PDF) - International Rectifier
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IR21531PBF Datasheet PDF : 9 Pages
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Preliminary Data Sheet No. PD60131 revM
IR21531(D)(S) & (PbF)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
• Integrated 600V half-bridge gate driver
• 15.6V zener clamp on Vcc
• True micropower start up
• Tighter initial deadtime control
• Low temperature coefficient deadtime
• Shutdown feature (1/6th Vcc) on CT pin
• Increased undervoltage lockout Hysteresis (1V)
• Lower power level-shifting circuit
• Constant LO, HO pulse widths at startup
• Lower di/dt gate driver for better noise immunity
• Low side output in phase with RT
• Internal 50nsec (typ.) bootstrap diode (IR21531D)
• Excellent latch immunity on all inputs and outputs
• ESD protection on all leads
• Also available LEAD-FREE
Product Summary
VOFFSET
Duty Cycle
Tr/Tp
Vclamp
Deadtime (typ.)
Packages
600V max.
50%
80/40ns
15.6V
0.6 µs
Description
The IR21531(D)(S) are an improved version of the
8 Lead PDIP
8 Lead SOIC
popular IR2155 and IR2151 gate driver ICs, and in-
corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard
CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown
feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage
control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage
lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at
startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,
and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to
maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Typical Connections
IR21531(S)
IR21531(D)
600V
MAX
600V
MAX
VCC VB
VCC VB
HO
RT
VS
HO
RT
VS
Shutdown
CT
LO
COM
Shutdown
CT
LO
COM
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