3N50 Просмотр технического описания (PDF) - Inchange Semiconductor
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3N50 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N50
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
VSD
Diode Forward On-voltage
IS= 1.5A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 1.5A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
ID=1.5A;
VDD=250V;
RL=50Ω
MIN TYPE MAX UNIT
500
V
2.0
4.0
V
1.4
V
3.0
Ω
±100 nA
10
µA
60
45
ns
75
135
·
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