3N40L-TF3-T(2011) Просмотр технического описания (PDF) - Unisonic Technologies

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Компоненты Описание

производитель

3N40L-TF3-T
(Rev.:2011)

3A, 400V N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N40

Preliminary

„ TEST CIRCUITS AND WAVEFORMS

D.U.T.

+

VDS

-

+

-

L

Power MOSFET

RG

Driver

VDD

* dv/dt controlled by RG

Same Type

VGS

as D.U.T.

* ISD controlled by pulse period

* D.U.T.-Device Under Test

VGS

(Driver)

ISD

(D.U.T.)

VDS

(D.U.T.)

Peak Diode Recovery dv/dt Test Circuit

P.W.

Period

P. W.

D=

Period

VGS= 10V

IFM, Body Diode Forward Current

di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDD

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

4 of 6

QW-R502-553.c

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