3N40G-TN3-R(2011) Просмотр технического описания (PDF) - Unisonic Technologies

Номер в каталоге

Компоненты Описание

производитель

3N40G-TN3-R
(Rev.:2011)

3A, 400V N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N40

Preliminary

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

400

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous (TC=25°C)

ID

Pulsed (Note 2)

IDM

3

A

12

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 2)

EAR

290

mJ

3

mJ

Power Dissipation

Derate above 25°C

TO-220F

TO-252

TO-220F

PD

TO-252

25

W

50

W

0.2

W/°C

0.4

W/°C

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=56mH, IAS=3.0 A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220F

TO-252

TO-220F

TO-252

SYMBOL

θJA

θJC

RATINGS

62.5

110

4.9

2.5

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 6

QW-R502-553.c

Share Link: