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3N06L20 Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd

Номер в каталоге
Компоненты Описание
производитель
3N06L20
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
3N06L20 Datasheet PDF : 6 Pages
1 2 3 4 5 6
3N06L20 TO252
TYPICAL CHARACTERISTICS 25 °C unless noted
100
VGS = 10 thru 6 V
5V
80
60
40
4V
20
3V
0
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
32
TC = - 55 °C
24
25 °C
125 °C
16
8
0
0
1000
5
10
15
20
25
ID - Drain Current (A)
Transconductance
800
Ciss
600
400
200
Coss
0 Crss
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
E-mail:China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
50
40
30
20
10
TC = 125 °C
25 °C
- 55 °C
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.10
0.08
0.06
0.04
VGS = 4.5 V
0.02
VGS = 10 V
0.00
0
10
20
30
40
50
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
8
VDS = 30 V
ID = 23 A
6
4
2
0
0
2
4
6
8
10
12
Qg - Total Gate Charge (nC)
Gate Charge
3

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