3N06L20 Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd

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3N06L20

N-Channel 60-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

3N06L20 TO252

N-Channel 6 0-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

60

0.025 at VGS = 10 V

0.030 at VGS = 4.5 V

ID (A)a

35

30

FEATURES

• TrenchFET® Power MOSFET

• 175 °C Junction Temperature

www.VBsemi.tw

Available

RoHS*

COMPLIANT

TO-252

D

GDS

Top View

Drain Connected to Tab

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

± 20

V

Continuous Drain Current (TJ = 175 °C)b

TC = 25 °C

TC = 100 °C

ID

35

28

Pulsed Drain Current

IDM

100

A

Continuous Source Current (Diode Conduction)

IS

23

Avalanche Current

IAS

20

Single Avalanche Energy (Duty Cycle ≤ 1 %)

L = 0.1 mH

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

TA = 25 °C

PD

100

3a

W

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambienta

Maximum Junction-to-Case

Notes:

a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec.

t ≤ 10 sec

Steady State

Symbol

RthJA

RthJC

Typical

18

40

3.2

Maximum

22

50

4

Unit

°C/W

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