DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

3N06L08 Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd

Номер в каталоге
Компоненты Описание
производитель
3N06L08
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
3N06L08 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
3N06L08 TO220
www.VBsemi.tw
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamic
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125 °C
VDS = 60 V, VGS = 0 V, TJ = 175 °C
VDS =5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS = 10 V, ID = 20 A, TJ = 175 °C
VGS = 7.5 V, ID = 15 A
VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
VDS = 30 V, VGS = 10 V, ID = 50 A
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 30 V, RL = 0.6
ID 50 A, VGEN = 10 V, Rg = 2.5
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
Pulsed Current
ISM
Diode Forward Voltage
VSD
IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr
IF = 20 A, di/dt = 100 A/µs
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2 %.
c. Independent of operating temperature.
Min.
Typ.a
Max.
Unit
60
V
2
4
± 100
nA
1
50
µA
250
60
A
0.005
0.010
0.015
0.008
60
S
6650
570
pF
325
47
70
10
nC
12
10
20
15
25
ns
35
50
20
30
350
A
1
1.5
V
45
100
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
E-mail:China@VBsemi TEL:86-755-83251052
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]