3N04H4 Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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3N04H4 Datasheet PDF : 7 Pages
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3N04H4 TO220
www.VBsemi.tw
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
RDS(on)
gfs
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 20 V, VGS = 10 V, ID = 20 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 20 V, RL = 1.0 Ω
ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 20 V, RL = 1.0 Ω
ID ≅ 20 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
TC = 25 °C
Body Diode Voltage
VSD
IS = 20 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
40
1.2
120
Typ. Max. Unit
41
-8
0.0055
0.0070
180
2.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
2400
750
pF
310
130
20
nC
32
0.85
1.3
Ω
20
30
11
17
77
115
10
15
ns
102
155
62
95
180
270
60
90
110
A
200
0.8
1.2
V
50
75
ns
70
105
nC
30
ns
20
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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