3N60-TR Просмотр технического описания (PDF) - Zibo Seno Electronic Engineering Co.,Ltd
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3N60-TR Datasheet PDF : 7 Pages
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Z ibo Seno Electronic Engineering Co., Ltd.
3N60 3N65
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
3N60
600
V
Drain-Source Breakdown Voltage
3N65
BVDSS VGS = 0V, ID = 250μA
650
V
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
10 μA
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
100 nA
-100 nA
Breakdown Voltage Temperature Coefficient
△BVDSS/△TJ
ID = 250 μA, Referenced to
25°C
0.6
V/°С
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
2.0
4.0 V
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID =1.5A
2.8 3.6 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS =25V, VGS =0V,f =1MHz
350 450 pF
50 65 pF
Reverse Transfer Capacitance
CRSS
5.5 7.5 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
tD (ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD =30V, I D =3.0A,
RG=25Ω
(Note 1, 2)
VDS=50V, VGS=10V,
ID=3.0A
(Note 1, 2)
35 50 ns
60 70 ns
100 150 ns
65 75 ns
18.5 23 nC
5.2
nC
4.9
nC
Drain-Source Diode Forward Voltage
VSD
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%
VGS = 0 V, ISD = 3.0 A
VGS = 0 V, ISD = 3.0A,
di/dt = 100 A/μs (Note1)
1.4 V
3.0 A
12 A
210
ns
1.2
μC
2. Essentially independent of operating temperature
3N60 3N65
3 of 7
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