GBU808 Просмотр технического описания (PDF) - Thinki Semiconductor Co., Ltd.
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производитель
GBU808 Datasheet PDF : 2 Pages
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GBU8005 thru GBU810
8
Resistive or
Inductive Load
6.4
4.8
3.2
1.6
0
0
50
100
150
TC, CASE TEMPERATURE (°C)
Figure 1 Forward Current Derating Curve
100
10
TJ = 25°C
1.0
0.1
0 0.2
0.6
1.0
1.4
1.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2 Typical Forward Characteristics, per element
250
200
150
Single half-sine wave
100
50
TJ = 25°C
0
1
10
100
NUMBER OF CYCLES AT 60Hz
Figure 3 Maximum Non-Repetitive Surge Current
1,000
100
TJ = 25°C
f = 1.0MHz
10
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V)
Figure 4 Typical Total Capacitance, per element
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
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