IRFP22N60K Просмотр технического описания (PDF) - Vishay Semiconductors
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IRFP22N60K Datasheet PDF : 11 Pages
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IRFP22N60K, SiHFP22N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS
TOP
15V
12V
10V
10
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
5.0V
0.01
0.001
0.1
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
100.00
10.00
TJ = 150°C
1.00
TJ = 25°C
0.10
VDS = 50V
20µs PULSE WIDTH
0.01
5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.0V
10
5.5V
BOTTOM 5.0V
5.0V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 150°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0
ID = 22A
2.5
2.0
1.5
1.0
0.5
V GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (° C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91208
S11-0445-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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