ISCND217P Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
ISCND217P Datasheet PDF : 2 Pages
| |||
isc Silicon NPN Power Transistors
ISCND217P
DESCRIPTION
·DC Current Gain -hFE = 150(Min)@ IC= 0.8A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current
Collector Power Dissipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
3
A
65
W
2
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.92
℃/W
isc website： www.iscsemi.com
1 isc & iscsemi is registered trademark
Share Link: 