2SK4082 Просмотр технического описания (PDF) - NEC => Renesas Technology

Номер в каталоге

Компоненты Описание

производитель

2SK4082

SWITCHING N-CHANNEL POWER MOS FET

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK4082

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK4082 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and

designed for high voltage applications such as switching power supply, AC adapter.

FEATURES

• Low on-state resistance

RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 1.8 A)

• Low gate charge

QG = 13 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 3.5 A)

• Gate voltage rating: ±30 V

• Avalanche capability ratings

(Isolated TO-220)

ORDERING INFORMATION

PART NUMBER

2SK4082-S17-AY Note

LEAD PLATING

Pure Sn (Tin)

PACKING

Tube 50 p/tube

PACKAGE

Isolated TO-220 (MP-45F) typ. 2.2 g

Note Pb-free (This product does not contain Pb in external electrode.)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

600

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±30

V

Drain Current (DC) (TC = 25°C)

Drain Current (pulse) Note1

ID(DC)

ID(pulse)

±3.5

A

±14

A

Total Power Dissipation (TC = 25°C)

PT1

35

W

Total Power Dissipation (TA = 25°C)

PT2

2.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Single Avalanche Current Note2

Single Avalanche Energy Note2

Tstg

−55 to +150 °C

IAS

2

A

EAS

240

mJ

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D18786EJ1V0DS00 (1st edition)

Date Published June 2007 NS

Printed in Japan

2007

Share Link: