34N65M5 Просмотр технического описания (PDF) - STMicroelectronics
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34N65M5 Datasheet PDF : 22 Pages
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STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
12
VDS
10
8
6
4
VDD=520 V
ID=14 A
AM15321v1
VDS
(V)
500
400
300
200
2
100
0
0
0
20 30 40 50 60 70 80 Qg(nC)
Figure 9. Static drain-source on-resistance
RDS(on)
(Ω)
0.096
0.096
VGS=10V
AM15322v1
0.094
0.092
0.09
0.088
0.086
0.084
0.082
0.08
0
5 10 15 20 25 ID(A)
Figure 10. Capacitance variations
C
(pF)
AM15323v1
1000
Ciss
1000
Figure 11. Output capacitance stored energy
Eoss
(µJ)
12
AM15324v1
10
8
100
6
Coss
4
10
Crss
2
1
0.1
1
10
100 VDS(V)
0
0 100 200 300 400 500 600 VDS(V)
Figure 12. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
VDS = VGS
ID = 250 µA
AM05459v1
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
1.9
VGS = 10 V
ID = 14 A
AM05460v1
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
DocID022853 Rev 3
7/22
22
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