34N65M5 Просмотр технического описания (PDF) - STMicroelectronics

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34N65M5

N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

VGS Gate-source voltage

± 25

ID Drain current (continuous) at TC = 25 °C

28

ID Drain current (continuous) at TC = 100 °C

17.7

IDM (1) Drain current (pulsed)

112

PTOT Total dissipation at TC = 25 °C

190

dv/dt (1) Peak diode recovery voltage slope

15

dv/dt (2) MOSFET dv/dt ruggedness

50

Tstg Storage temperature

Tj Max. operating junction temperature

1. ISD ≤ 28 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.

2. VDS ≤ 480 V

- 55 to 150

150

Unit

V

A

A

A

W

V/ns

V/ns

°C

°C

Symbol

Table 3. Thermal data

Value

Parameter

D2PAK

TO-220,

I2PAK

TO-247

Rthj-case Thermal resistance junction-case max

Rthj-pcb Thermal resistance junction-pcb max(1)

Rthj-amb Thermal resistance junction-ambient max

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

0.66

30

62.5

50

Unit

°C/W

°C/W

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

7

A

EAS

Single pulse avalanche energy (starting tj=25°C,

Id= IAR; Vdd=50)

510

mJ

DocID022853 Rev 3

3/22

22

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