72T03GJ-HF Просмотр технического описания (PDF) - VBsemi Electronics Co.,Ltd
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72T03GJ-HF Datasheet PDF : 8 Pages
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72T03GJ-HF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.06
TJ = 150 °C
0.05
10
TJ = 25 °C
0.04
1
0.03
0.1
0.02
www.VBsemi.tw
ID = 10 A
TJ = 125 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.01
TJ = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
120
0.2
0.0
- 0.2
- 0.4
- 0.6
96
72
ID = 5 mA
48
ID = 250 µA
24
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power (Junction-to-Ambient)
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
Single Pulse
BVDSS
DC
Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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